Yougou Electronics (Shenzhen) Co., Ltd.
Yougou Electronics (Shenzhen) Co., Ltd.
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Transform your power supply with the exceptional SVF7N65F SI7N65F transistor, designed to bring you unparalleled benefits. Manufactured using state-of-the-art VAMOS process technology, this transistor comes with a strip-shaped cell design that offers superior switching performance, low on-resistance, and incredible avalanche breakdown tolerance.
Featuring a 7A, 650V, RDS(on) and low gate charge, this transistor boasts low reverse transfer capacitance, fast switching speed, and improved dv/dt capability. Ideal for use in AC-DC switching power supply, DC-DC power converter, and high-voltage H-bridge PWM motor drive, this product truly delivers. Upgrade your power supply with the SVF7N65F SI7N65F transistor today and experience the ultimate performance.
|
Type Designator |
SVF7N65F |
|
Type of Transistor |
MOSFET |
|
Type of Control Channel |
N -Channel |
|
Maximum Power Dissipation (Pd) |
46 W |
|
Maximum Drain-Source Voltage |Vds| |
650 V |
|
Maximum Gate-Source Voltage |Vgs| |
30 V |
|
Maximum Drain Current |Id| |
7 A |
|
Maximum Junction Temperature (Tj) |
150 °C |
|
Rise Time (tr) |
48 nS |
|
Drain-Source Capacitance (Cd) |
98.6 pF |
|
Maximum Drain-Source On-State Resistance (Rds) |
1.4 Ohm |
|
Package |
TO220F |