Yougou Electronics (Shenzhen) Co., Ltd.

Yougou Electronics (Shenzhen) Co., Ltd.

Manufacturer from China
Verified Supplier
3 Years
Home / Products / Transistor IC Chip /

200V 30A Transistor IC Chip IRFP250N MOSFET For High Voltage And High Current

Contact Now
Yougou Electronics (Shenzhen) Co., Ltd.
Visit Website
City:shenzhen
Country/Region:china
Contact Person:MrTony Zhang
Contact Now

200V 30A Transistor IC Chip IRFP250N MOSFET For High Voltage And High Current

Ask Latest Price
Video Channel
Brand Name :Infineon / IR
Model Number :IRFP250N
Part no. :IRFP250N
Type :MOSFET
Transistor Polarity :N-Channel
Continuous Drain Current :30 A
Drain-Source Breakdown Voltage :200 V
Condition :New
Stock :In Stock
MOQ :1
Price :Negotiable
more
Contact Now

Add to Cart

Find Similar Videos
View Product Description

IRFP250N Power MOSFET

The Perfect Solution for High Voltage and High Current Applications

Are you looking for a reliable MOSFET for your next electronic project? Look no further than the IRFP250N Power MOSFET. This MOSFET comes with a host of benefits that make it the perfect solution for high voltage and high current applications.

Pros:

- High voltage capability of up to 200V

- Low on-resistance (0.07 ohms), meaning it can handle high current levels

- High switching speed for fast and efficient operation

- Durable and long-lasting design

- Easy to install and integrate into existing circuits

- Affordable pricing, making it a cost-effective option for DIYers and professionals alike

Cons:

- May require additional cooling to prevent overheating in high power applications

- Not ideal for low voltage applications

- May not be suitable for applications requiring extremely precise control

In summary, the IRFP250N Power MOSFET is an excellent choice for high voltage and high current applications. Its high voltage capability, low on-resistance, and fast switching speed make it a reliable and affordable option for both DIYers and professionals. However, it may require additional cooling and may not be suitable for low voltage or highly precise applications.

Technical features:

  • Mounting Style: Through Hole
  • Package / Case: TO-247-3
  • Transistor Polarity: N-Channel
  • Number of Channels: 1 Channel
  • Vds - Drain-Source Breakdown Voltage: 200 V
  • Id - Continuous Drain Current: 30 A
  • Rds On - Drain-Source Resistance: 75 mOhms
  • Vgs - Gate-Source Voltage: - 20 V, + 20 V
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 175 C
  • Pd - Power Dissipation: 214 W
  • Channel Mode: Enhancement
  • Brand: Infineon / IR Configuration: Single
  • Fall Time: 33 ns
  • Height: 20.7 mm
  • Length: 15.87 mm
  • Product Type: MOSFET
  • Rise Time: 43 ns
  • Subcategory: MOSFETs
  • Transistor Type: 1 N-Channel
  • Typical Turn-Off Delay Time: 41 ns
  • Typical Turn-On Delay Time: 14 ns
  • Width: 5.31 mm Unit
  • Weight: 0.211644 oz
Inquiry Cart 0