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Stable Infineon IGBT Transistor Module BUP314D High Power Width 4.9mm

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Stable Infineon IGBT Transistor Module BUP314D High Power Width 4.9mm

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Brand Name :Infineon
Model Number :BUP314D
MOQ :1
Part number :BUP314D
Brand :Infineon
Type :High-Power Transistor
Available :Yes
Condition :New
Price :Negotiable
Stock :In Stock
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Efficient and Reliable: The BUP314D High-Power Transistor

Pros and Cons of Using the BUP314D Transistor in Your Electronics Projects

Looking for a high-power transistor to use in your next electronics project? Look no further than the BUP314D. This efficient and reliable transistor offers a maximum power dissipation of 525 watts and a maximum collector current of 40 amperes, making it an ideal choice for high-power switching applications that require fast switching times. When it comes to the pros of using the BUP314D, its efficiency and reliability are two of its biggest advantages.

Thanks to its low power consumption, this transistor can help reduce the overall energy consumption of an electronics system, making it a more environmentally-friendly option. Additionally, the BUP314D's reliable performance and robust design mean that it can withstand high temperatures and harsh operating conditions without experiencing failure or degradation. While the BUP314D offers numerous benefits, there are some potential drawbacks to consider as well. One potential con is that this transistor may be more expensive than some other high-power options on the market, which could make it less cost-effective for certain projects. Additionally, its high power dissipation and collector current may be overkill for some applications, making it unnecessarily large and bulky.

Overall, the BUP314D is a top-performing transistor that offers efficient and reliable performance for high-power switching applications. Whether you're building a new electronics project from scratch or upgrading an existing one, this powerful transistor is definitely worth considering.

Technical details:

  • Manufacturer: Infineon
  • Product Category: IGBT Transistors
  • Technology:Si
  • Package/Case:TO-218-3
  • Mounting Style:Through Hole
  • Configuration:Single
  • Collector- Emitter Voltage VCEO Max:1.2 kV Maximum
  • Gate Emitter Voltage:- 20 V, + 20 V Minimum
  • Operating Temperature:- 55 C
  • Maximum Operating Temperature:+ 150 C
  • Packaging:Tube
  • Brand:Infineon Technologies
  • Continuous Collector Current Ic Max:42 A
  • Height: 12.5mm
  • Length: 15mm
  • Product Type:IGBT Transistors
  • Subcategory:IGBTs
  • Width:4.9 mm
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