Yougou Electronics (Shenzhen) Co., Ltd.
Yougou Electronics (Shenzhen) Co., Ltd.
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The Infineon IRFP4668PBF is a high-power N-Channel MOSFET designed to deliver excellent performance and efficiency in various applications. It belongs to the HEXFET® series and is suitable for use as a single FET in circuit designs. With a drain-to-source voltage (Vdss) rating of 200V, this MOSFET can handle high voltage levels, making it suitable for demanding applications. It has a continuous drain current (Id) rating of 130A at 25°C (with case temperature as the reference), allowing for robust power handling capabilities.
The IRFP4668PBF MOSFET features a low on-resistance (Rds On) of 9.7mOhm at a drain current (Id) of 81A and a gate-source voltage (Vgs) of 10V. This low on-resistance minimizes power losses and enhances overall system efficiency. Operating with a gate-source threshold voltage (Vgs(th)) of 5V at an Id of 250µA, this MOSFET requires a drive voltage of up to 10V for optimal performance. It has a maximum gate-source voltage (Vgs) of ±30V, ensuring safe operation within specified limits. The IRFP4668PBF MOSFET has a gate charge (Qg) of 241nC at a gate-source voltage (Vgs) of 10V. This parameter indicates the amount of charge required to switch the MOSFET on and off efficiently.
With an input capacitance (Ciss) of 10,720pF at a drain-to-source voltage (Vds) of 50V, this MOSFET provides a suitable capacitive load for driving circuits. Operating in a wide temperature range from -55°C to 175°C (TJ), the IRFP4668PBF can withstand varying environmental conditions. Its TO-247-3 package allows for through-hole mounting, ensuring secure and reliable connections. The Infineon IRFP4668PBF N-Channel MOSFET is an active product, meaning it is currently available for purchase. With its high power dissipation of 520W (Tc), it can handle substantial power levels effectively.
| Feature | Specification |
|---|---|
| Manufacturer | Infineon |
| Category | Discrete Semiconductor Products |
| Transistor Type | FETs, MOSFETs |
| Series | HEXFET |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (Vdss) | 200V |
| Continuous Drain Current (Id) @ 25°C | 130A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 9.7mOhm @ 81A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 241 nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 10720 pF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Base Product Number | IRFP4668 |